Sputter-deposited WSi0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 degreesC for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 degreesC but showed reduced forward and reverse currents when measured at elevated temperature (300 degreesC) compared to the more common Ni rectifying contacts. (C) 2003 Elsevier Ltd. All rights reserved.