The device/circuit performance of strained-Si (SS) MOSFETs including strained-Si channel-on-insulator (SSOI) is assessed via a physics-based compact model calibrated against fabricated 70 nm strained and unstrained (control) Si devices. With emphasis on SS device specific features, mobility enhancement and band offsets, and SOI advantages, dynamic floating-body effects and no areal junction capacitance, the speed superiority of SSOI CMOS is discussed. Device design point and performance trade-off are presented as well, thus allowing exploitation of maximum performance in the SS devices. (C) 2003 Elsevier Ltd. All rights reserved.