The performance of a 9 device array of 500 x 500 mum(2) GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was similar to5.5 V at 25 degreesC, with an on-state resistance of similar to5 x 10(-3) Omegacm(2). The total forward current was 1 A at similar to8.8 V and 2.6 A at 18 V. The power figure-of-merit for the array, V-B(2)/R-ON, was 0.69 MWcm(-2), with a reverse recovery time of less than or equal to300 ns. The individual p-i-n rectifiers were interconnected using electroplated Au and clamped in a Cu pressure pack for thermal management. (C) 2003 Elsevier Ltd. All rights reserved.