This overview discusses the impact of ionizing irradiation on the static, the transient and the low-frequency noise characteristics of deep submicron partially depleted (PD) silicon-on-insulator (SOI) transistors. It is demonstrated that, while from a total ionizing dose (TID) damage viewpoint the technology is suitable for space applications, there is still a marked performance degradation. Evidence is provided that at least two basic mechanisms are involved. One is related to the radiation-induced hole trapping in the field oxide, giving rise to a subthreshold leakage current. In addition, the occurrence of majority carrier injection by electron valence-band (EVB) tunneling gives rise to some unexpected frontback channel coupling effects. A second yet unknown mechanism gives rise to a length-dependent response of the static device parameters, pointing to a laterally non-uniform charging of the gate oxide and/or the silicon body. (C) 2004 Elsevier Ltd. All rights reserved.