In this paper, intrinsic device parameters, directly extracted from buried-channel n-HMODFET devices biased at micropower supply levels are presented. Sub-threshold region peaks in plots of intrinsic transit frequency and transconductance vs. bias clearly exemplify the devices suitability for RF/micropower applications. Measurements are also presented for a SiGe n-HMODFET inverting amplifier and self-biased dynamic load with a maximum (G(MAX)) power gain of 26 dB and corner frequency of 40 MHz recorded for an amplifier device power-drain of just 77 muW and a total power drain of 150 muW. A comparison of gain-efficiency (maximum gain vs. total input power) at micropower (200 mV V-DD) and full power (3 V V-DD) yields 4x greater efficiency at rnicropower Supply levels. (C) 2004 Elsevier Ltd. All rights reserved.