This paper examines the temperature dependence of the threshold voltage (V-TH) of extremely thin fully depleted SO] MOSFETs with thickness under 10 nm over a wide range of temperatures (31-300 K). The calculated temperature dependence Of V-TH shift for devices with 10 or 6 nm thick SOI layers is compared to experimental results. Theory suggests that the energy quantization of electrons in the ultra-thin Sol layer strongly suppresses the temperature dependence of threshold voltage. This is partially supported by a comprehensive analysis of the experimental results. (C) 2004 Elsevier Ltd. All rights reserved.