A Pd/In/Pd/Pt/Au ohmic contact to n-GaSb is presented with a specific contact resistance of 2.4 x 10(-6) Omega cm(2). The annealing temperature range over which the specific contact resistance drops to a minimum, while maintaining a suitable surface morphology, is at least twice that of previously reported ohmic contacts to n-GaSb. Materials characterization using cross-sectional transmission electron microscopy confirms that GaxIn1-xSb forms at the metal/semiconductor interface, and its formation is believed to be responsible for ohmic behavior. (C) 2004 Elsevier Ltd. All rights reserved.