Solid-State Electronics, Vol.48, No.10-11, 1791-1794, 2004
Si doped p- and n-type AlxGa1-xAs epilayers for high density lateral-junction LED arrays on (311)A patterned substrate
The controlled incorporation of amphoteric Si dopant for p- and n- type conductivity in AlxGa1-xAs layers simultaneously grown on GaAs (3 1 I)A and (10 0) substrates by molecular beam epitaxy (MBE) was investigated for different Al compositions (10-50%). The optimized growth conditions have been used to grow lateral junction (LJ) light emitting diodes (LEDs) structures on GaAs (3 1 I)A patterned substrate. High density (2400 device per inch) LJ-LED arrays were successfully fabricated. The electroluminescence spectrum shows a single peak around 813 nm at room temperature. (C) 2004 Elsevier Ltd. All rights reserved.