N and p channel FinFETs with fin widths in the range of 15-30 nm and gate lengths down to 20 nm have been processed using e-beam-lithography and nano-etching. The I-On-I-off characteristics of n-channel FinFET devices with (10 0) and (I 10) sidewall orientation made on the same wafer are compared. Low off currents down to I pA/mum and high on-currents were observed and we demonstrate that FinFETs are more suitable than bulk transistors to achieve the requirements for low power applications. (C) 2004 Elsevier Ltd. All rights reserved.