The first demonstration of the monolithic integration of CMOS and Si/SiGe resonant interband tunnel diodes (RITD) with negative differential resistance (NDR) is reported in this paper. The Si/SiGe RITDs exhibited a peak-to-valley current ratio (PVCR) up to 2.8 and peak current density (J(p)) of 0.26 kA/cm(2) at room temperature. This study focused on the utilization of a pair of tunnel diodes connected in series to form a latch. Employing a FET to supply current into the latch, a RITD/NMOS monostable-bistable transition logic element (MOBILE) was realized. The latch exhibited a voltage swing of 84% at an applied supply voltage of 0.5 V. This logic element enables low voltage operation for high density circuit design of embedded memory. (C) 2004 Elsevier Ltd. All rights reserved.