A series of CdTe/ZnTe films was grown by molecular beam epitaxy (MBE) onto Si substrates. We examine the relationships between the film morphology, the ZnTe growth method, and the Si growth orientation. The substrates' degree of miscut from the [1 1 1] direction ranged from 0degrees to 29.5degrees. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) studies show that the substrate orientation is maintained by the ZnTe/CdTe epilayers only for low miscut angles. For higher miscut angles, the film orientation does not match that of the substrate, and in some cases is dependent on the growth methods used to deposit the ZnTe buffer layer. Published by Elsevier Ltd.