Transit times of SiGe : C HBTs using nonselective base epitaxy

Zerounian N; Rodriguez M; Enciso M; Aniel F; Chevalier P; Martinet B; Chantre A

Solid-State Electronics, Vol.48, No.10-11, 1993-1999, 2004

DOI10.1016/j.sse.2004.05.046 Export Citation

Transit times of SiGe : C HBTs using nonselective base epitaxy

Zerounian N, Rodriguez M, Enciso M, Aniel F, Chevalier P, Martinet B, Chantre A

This paper reports an extensive investigation of high frequency figures of merit versus temperature carried out on SiGe:C bipolar transistors with several base doping and activation annealing conditions. The best f(T)'s are 188 and 278 GHz at 300 and 75 K, respectively. Contributions to total emitter collector delay are discussed and an original method based on collector capacitance measurement is proposed to calculate the collector transit time. (C) 2004 Elsevier Ltd. All rights reserved.

Keywords:heterojunction bipolar transistors;integrated bipolar transistors;SiGe;transit time;collector transit time;charging time;f(T);f(MAX);300-77 K;cryogenic;S-parameters;small-signal parameters;parameter extraction