Solid-State Electronics, Vol.48, No.10-11, 2067-2070, 2004
Gallium-arsenide deep-level tunnel diode with record negative conductance and record peak current density
Tunnel diodes utilizing deep-levels in low-temperature-grown (LTG) gallium-arsenide (GaAs) are demonstrated. These tunnel diodes achieve peak-to-valley current ratios as high as 22, a record negative-conductance-per-area of 1/226 Omegamum(2), and a record peak current density of 16 kA/cm(2), all at room-temperature. (C) 2004 Elsevier Ltd. All rights reserved.
Keywords:negative resistance devices;semiconductor defects;semiconductor diodes;semiconductor impurities;tunnel diodes