Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs

Tilke AT; Rothenhausser S; Rochel M; Stahrenberg K; Goller K; Junge A; Pribil A; Foste B; Wiedemann J; Tegeler M; Berkner J; Wagner C; Dahl C

Solid-State Electronics, Vol.48, No.12, 2243-2249, 2004

DOI10.1016/j.sse.2004.04.014 Export Citation

Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs

Tilke AT, Rothenhausser S, Rochel M, Stahrenberg K, Goller K, Junge A, Pribil A, Foste B, Wiedemann J, Tegeler M, Berkner J, Wagner C, Dahl C

We present a modular 0.25 mum ASIC-compatible, double-poly self-aligned BiCMOS technology comprising either an implanted-base 45 GHz bipolar transistor or a 80 GHz-HBT with selective SiGe-epitaxy. All passive devices for RF-design are integrated, including a 7 fF/mum(2) stacked MIS-/MIM-capacitor. (C) 2004 Elsevier Ltd. All rights reserved.

Keywords:bipolar;BICMOS;SiGe;integrated circuits