In this paper a new DC/dynamic analytical model for organic thin-film transistors (OTFTs) is presented. The model is based on the variable range hopping theory, i.e. thermally activated tunneling of carriers between localized states. It accurately accounts for below-threshold, linear, and saturation operating conditions via a single formulation. Furthermore, the model does not require the explicit definition of the threshold and saturation voltages as input parameters, which are rather ambiguously defined, and it is suitable for CAD applications. (C) 2005 Elsevier Ltd. All rights reserved.