Analytical model for buried p-layer 4H-SiC MESFET in saturation region is proposed. This model provides static characteristics and small signal parameter and has been extended to predict the effect of B.P.Layer on capacitance-voltage characteristics and cutoff frequency. In the saturation region, the depletion region formed in the active region due to B.P.Layer is no longer independent of gate voltage so the effect of gate voltage on the second depletion region has also been considered for accurate prediction of charge. The results so obtained are compared with simulated data to prove the validity of the model. (c) 2005 Elsevier Ltd. All rights reserved.