interface defects have limited 4H-SiC MOS-based FET channel mobility to less than 40-50 cm(2)/V s after more than 10 years of improvement. Junction-based FET, on the other hand, presents an excellent opportunity. This paper will report the realization of a record high channel mobility of 398 cm(2)/V s for 4H-SiC lateral junction FET. The fabrication and characterization as well as computer modeling results will be presented. The application of this very high channel mobility will also be discussed. (C) 2005 Elsevier Ltd. All rights reserved.