Si-based resonant interband tunnel diodes (RITD) were monolithically integrated with Si/SiGe heterojunction bipolar transistors (HBT) on silicon substrates effectively creating a 3-terminal negative differential resistance (NDR) device. We demonstrate that the room temperature NDR in the I-C-V-EC characteristics under common emitter configuration can be controlled by a third terminal which is the basis of the integrated circuit. The estimated NDR values from the DC I-V characteristics, assuming that the NDR is linear, can be varied from about -27.5 Omega to -180 Omega with respect to V-CE in the range of 0.96 V-1.16 V. (c) 2006 Elsevier Ltd. All rights reserved.