A methodology for the extraction of a bipolar transistor collector resistance from its output characteristics using the Forced-Beta Method has been demonstrated. The presented extraction methodology eliminates the need for additional measurements in the evaluation of collector resistances and allows reuse of the existing standard output characteristics data. The method is particularly suitable for compact modeling and technology characterization from high-frequency transistor test structures with no separate substrate contacts. (c) 2006 Elsevier Ltd. All rights reserved.