Temperature dependences of recombination current at interface traps in MOS transistor structure are investigated using the Shockley-Read-Hall. Recombination DC current-voltage (R-DCIV) characteristics. Results include the effects of energy distribution of the interface traps (discrete, constant and U-shaped energy distributions) on the temperature dependence of the base terminal current-vs-gate-voltage lineshape (I-B-V-GB), the peak current and voltage (IB-peak, VGB-peak) and their thermal activation energy E-A, and the reciprocal slope n of the IB-peak vs base/drain (or base/source) p/n junction forward voltage V-BD. Surface impurity concentration and oxide thickness are varied. Temperature dependence of E-A, VGB-peak and n is small while IB-peak and R-DCIV linewidth, large. This small temperature dependence simplifies the experimental implementation and data analysis of R-DCIV methodology applied at room temperatures without using expensive temperature controlled wafer-probe station. (c) 2006 Elsevier Ltd. All rights reserved.