Models needed for drift-diffusion simulation of InSb MOSFETs in commercially available simulator are presented and applied to the problem of scaling of the exclusion/extraction InSb MOSFETs. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0. 15 mu m are analyzed. Because of its high mobility and saturation velocity, InSb shows promise as a material for THz active devices operating at very low voltages, despite its low bandgap and resulting leakage currents. (C) 2006 Elsevier Ltd. All rights reserved.