In this work, we present for the first time, a highly scalable general high voltage MOSFET model, which can be used for any high voltage MOSFET with extended drift region. This model includes physical effects like the quasi-saturation, impact-ionization and self-heating, and a new general model for drift resistance. The model is validated on the measured characteristics of two widely used high voltage devices in the industry i.e. LDMOS and VDMOS devices, and implemented on commercial circuit simulators like SABER (Synopsys), ELDO (Mentor Graphics), Spectre (Cadence) and UltraSim (Cadence). The accuracy of the model is better than 10% for DC V V and g-V characteristics and shows good behavior for all capacitances which are unique for these devices showing peaks and shift of peaks with bias variation. The model also exhibits excellent scalability with transistor width, drift length, number of fingers and temperature. (c) 2006 Elsevier Ltd. All rights reserved.