The paper presents a novel modelling technique for the static characteristics of power Schottky barrier diodes on SiC. Starting from an accurate and physically sound estimation of the transmission coefficient for the electrons movement across the Schottky barrier, the forward and reverse bias static current is evaluated and compared to experimental results. In order to properly reproduce experimental results, an inhomogeneous parallel conduction description of the Schottky barrier is shown to be required in reverse bias. Furthermore, consistently with previous work, a Schottky barrier height reduction is observed in moving from forward to reverse bias. (C) 2007 Elsevier Ltd. All rights reserved.