Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes

Echtermeyer T; Gottlob HDB; Wahlbrink T; Mollenhauer T; Schmidt M; Efavi JK; Lemme MC; Kurz H

Solid-State Electronics, Vol.51, No.4, 617-621, 2007

DOI10.1016/j.sse.2007.02.008 Export Citation

Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes

Echtermeyer T, Gottlob HDB, Wahlbrink T, Mollenhauer T, Schmidt M, Efavi JK, Lemme MC, Kurz H

Electrical properties of metal oxide semiconductor (MOS) capacitors with gate stacks of epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) are studied. The influence of CMOS compatible rapid thermal annealing on these gate stacks is examined. Finally, n- and p-type MOS-field effect transistors (MOSFETs) on silicon on insulator (SOI) material with epitaxial Gd2O3 and TiN gate electrodes are presented. (c) 2007 Elsevier Ltd. All rights reserved.

Keywords:high-k;rare earth oxide;CMOS;metal gate