In this paper, a closed-form analytical model for bulk MOS devices is presented, which calculates the device current from a 2D analytical solution of Poisson's equation with self-consistently taking into account the inversion charge in the channel. The followed analytical technique for calculating the potential barrier height is highly structure oriented and valid from below to above threshold device operation. A charge-controlled current equation including hydrodynamic effects is derived which results in a model with excellent sealability. It is very close to device physics without the need to introduce numerical fitting parameters. (c) 2007 Elsevier Ltd. All rights reserved.