A continuous and analytic channel potential solution for uncloped (lightly doped) surrounding-gate (SRG) MOSFETs is presented in this article. It is based on the exact solution of Poisson's equation, allowing the surface potential to be adequately described from the subthreshold to strong inversion region. It is demonstrated that the analytic channel potential characteristics agree with the Newton-Raphson iterative solutions for all ranges of gate and quasi-Fermi-potential. (c) 2007 Elsevier Ltd. All rights reserved.