An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration (vol 51, pg 179, 2007)

He J; Bian W; Tao YD; Liu F; Lu KL; Wu W; Wang T; Chan MS

Solid-State Electronics, Vol.51, No.5, 816-816, 2007

DOI10.1016/j.sse.2007.03.003 Export Citation

An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration (vol 51, pg 179, 2007)

He J, Bian W, Tao YD, Liu F, Lu KL, Wu W, Wang T, Chan MS