플렉시블 디스플레이용 Stainless Steel 기판의 에폭시 평탄막 연구

홍용택; 정승준; 최지원; Yongteak Hong; Seungjoon Jung; Jiwon Choi

Polymer(Korea), Vol.31, No.6, 526-531, November, 2007

Export Citation

플렉시블 디스플레이용 Stainless Steel 기판의 에폭시 평탄막 연구

Epoxy Planarization Films for the Stainless Steel Substrates for Flexible Displays

홍용택, 정승준, 최지원^{1, †}

서울대학교 전기컴퓨터 공학부
¹경희대학교

Yongteak Hong, Seungjoon Jung, and Jiwon Choi^{1, †}

Department of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shinlim-dong, Kwanakgu, Seoul 151-742, Korea
¹Department of Chemical Engineering, Kyung Hee University, Yongin, Gyeonggi-do 449-701, Korea

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초록

본 논문은 플렉시블 디스플레이용 stainless steel(SS) 기판의 평탄막 재료로서 유기 및 유기/무기 하이브리드 에폭시 레진을 연구한 첫 결과를 보고한다. 유기 에폭시로는 diglycidyl ether of bisphenol A(DGEBA)를, 하이브리드 에폭시는 실세스퀴옥산이 포함된 octa(dimethylsiloxypropylglycidylether) silsesquioxane(OG)를 선택하였다. 경화제로는 diaminodiphenylmethane(DDM)을 에폭시와 1：2 당량비로 사용하였으며 두 물질 모두 SS 기판위에 어려움 없이 코팅이 되었다. TGA로 살펴본 열 안정성 분석은 순수한 물질이나 경화된 필름이나 모두 OG가 DGEBA 보다 안정하며 AFM에 의한 필름 표면의 관찰은 필름이 충분히 두꺼운 경우(> 1 m) 1∼2 nm 정도의 표면 거칠기 값을 갖는 평탄한 면이 얻어진다는 것을 보여주었다. 또 이 필름들은 0~10000 초에 걸치는 시간 동안 100 V와 100 ℃의 외부 스트레스를 받은 후에도 일정한 유전 상수(∼3.5), 정전 용량 및 전류의 흐름을 나타내 절연 특성이 안정되어 있다는 것을 알 수 있었다.

This paper reports the first results of a series of planarization film study for the stainless steel (SS) substrates for flexible displays. Diglycidyl ether of bisphenol A (DGEBA) and octa(dimethylsiloxypropylglycidylether) silsesquioxane (OG) were chosen for the organic and the hybrid epoxies respectively and diaminodiphenylmethane (DDM) was used as a curing agent at 1:2 stoichiometric ratio. These materials were spin-coated on SS substrates and thermal-cured. TGA study indicated that both the pristine and the cured OG were more thermally stable than DGEBA. AFM study showed that the smooth surfaces of 1∼2 nm roughness can be prepared for both DGEBA and OG when the films were thick (> 1 μm). The electrical properties such as dielectric constant, capacitance and the leakage current with respect to the applied voltage were all stable even after the stress of 100 V/100˚ C was applied for 0∼10000 seconds indicating that the insulating properties of DGEBA and OG films were very reliable.

Keywords:epoxy;silsesquioxane;flexible display;planarization;stainless steel

[References]

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Chang TS, Chang TC, Liu PT, Chang TS, Yeh FS, Thin Solid Films, 498(1-2), 70 (2006)
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Sellinger A, Laine RM, Chem. Mater., 8, 1592 (1996)
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Schwodiauer R, Neugschwandtner GS, Bauer-Gogonea S, Bauer S, Appl. Phys. Lett., 75, 3998 (1999)
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[Referenced By]

[1] Mofatt DM, MRS Bulletin, 21, 31 (1996)

[2] Gustafsson G, Cao Y, Treacy GM, Klavetter F, Colaneri N, Heeger AJ, Nature, 357, 477 (1992)

[3] Heeger AJ, Long J, Opt. Photon. News, 7, 23 (1996)

[4] Gu G, Burrows PE, Venkatesh S, Forrest SR, Opt. Lett., 22, 172 (1992)

[5] Smith PM, Carey PG, Sigmon TW, Appl. Phys. Lett., 70, 342 (1997)

[6] Wu M, Bo X, Sturm JC, Wagner S, IEEE Trans. Electron Devices, 49, 1993 (2002)

[7] Wu M, Pangal K, Sturm JC, Wagner S, Appl. Phys. Lett., 75, 2244 (1999)

[8] Serikawa T, Omata F, IEEE Electr. Device L., 20, 574 (1999)

[9] Howell RS, Stewart M, Karnik SV, Saha SK, Hatalis M, IEEE Electr. Device L., 21, 70 (2000)

[10] Afentakis T, Gatalis M, Voutsas AT, Hartzell J, IEEE Trans. Electron Devices, 53, 815 (2006)

[11] Wu CC, Theiss SD, Gu G, Lu MH, Strum JC, Wagner S, Forrest SR, IEEE Electr. Device L., 18, 609 (1997)

[12] Jin D, Jeong J, Shin H, Kim M, Ahn T, Kwon S, Kwack J, Kim T, Mo Y, Chung H, SID 06 DIGEST, 1855 (2006)

[13] Cheon J, Choi J, Hun J, Jang J, IEEE Trans. Electron Devices, 53, 1273 (2006)

[14] Chwang A, Hewitt R, Urbanik K, Silvernail J, Rajan K, Hack M, SID 06 DIGEST, 1858 (2006)

[15] Chang J, Wu J, Huang C, Chen Y, Wang L, Luo Y, Peng I, Wong T, Wang M, Chang J, Euro Display, 133 (2005)

[16] Templier F, Aventurier B, Moreau M, Mortillaro A, Templier R, Passero A, EuroDisplay, 414 (2005)

[17] Theiss SD, Wagner S, IEEE Electr. Device L., 17, 578 (1996)

[18] Suo Z, Ma EY, Gleskova H, Wagner S, Appl. Phys. Lett., 74, 1177 (1999)

[19] Chang T, Liu P, Tasi T, Yeh F, Tseng T, Tsai M, Chen B, Yang Y, Sze S, Jpn. J. Appl. Phys., 40, 3143 (2001)

[20] Maddalon C, Barla K, Denis E, Lous E, Perrin E, Lis S, Lair C, Dehan E, Microelectron. Eng., 50, 33 (2000)

[21] Chang TS, Chang TC, Liu PT, Chang TS, Yeh FS, Thin Solid Films, 498(1-2), 70 (2006)

[22] Liu PT, Chang TC, Huang MC, Yang YL, Mor YS, Tsai MS, Chung H, Hou J, Sze SM, J. Electrochem. Soc., 147(11), 4313 (2000)

[23] Lee H, Soles CL, Liu DW, Bauer BJ, Lin EK, Wu WL, J. Appl. Phys., 95, 2355 (2004)

[24] Sellinger A, Laine RM, Chem. Mater., 8, 1592 (1996)

[25] Choi J, Harcup J, Yee AF, Zhu Q, Laine RM, J. Am. Chem. Soc., 123(46), 11420 (2001)

[26] Boudefel A, Gonon P, J. Mater. Sci. -Mater. Electron., 17, 205 (2006)

[27] Zong L, Zhou S, Sgriccia N, Hawley MC, Polym. Eng. Sci., 45(12), 1576 (2005)

[28] Schwodiauer R, Neugschwandtner GS, Bauer-Gogonea S, Bauer S, Appl. Phys. Lett., 75, 3998 (1999)

[29] Schwodiauer R, Neugschwandtner GS, Bauer-Gogonea S, Bauer S, Appl. Phys. Lett., 76, 2612 (2000)