The InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) have been fabricated using hydrogen ion-implantation and laser liftoff techniques. The RCLEDs structure consisted of an InGaN/GaN multiple-quantum-well active layer between the top (5 pairs) and bottom (7.5 pairs) dielectric TiO2/SiO2 distributed Bragg reflectors with optical reflectance of 85% and 99.9%, respectively. The insulation layers of the RCLEDs with and without H+ implantation were formed by the hydrogen ion-implantation layers of 1x10(14) ions/cm(2) concentration and SiO2 film, respectively. The corresponding forward turn-on voltage at 0.6 kA/cm(2) dc current density injection were about similar to 4.58 V and similar to 4.55 V for the RCLEDs with and without H+ implantation. The light output intensity of the RCLEDs with H+ implantation is higher by a factor of 1.4 as compared to that of the similar structure without H+ implantation at a current density of 0.6 kA/cm(2). The directionality of RCLEDs with H+ implantation is superior to that of RCLEDs without H+ implantation. (c) 2007 The Electrochemical Society.