화학공학소재연구정보센터
Journal of Crystal Growth, Vol.308, No.2, 297-301, 2007
Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser
A novel butt-joint coupling scheme is proposed to improve the coupling efficiency for the integration of a GalnAsP MQW distributed feedback (DFB) laser with an MQW electro-absorption modulator (EAM). The proposed method gives more than 90% coupling efficiency, being much higher than the 26% coupling efficiency of the common MQW-MQW coupling technique. The differential quantum efficiency of the MQW-bulk-MQW coupled device is also much higher than that of the MQW-MQW device, 0.106 mW/mA versus 0.02 mW/mA. The EAM-DFB devices fabricated by the proposed method exhibit a very high modulation efficiency (12 dB/V) from 0 to I V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.28 pF. The experimental results demonstrate that the method can replace the conventional MQW-MQW coupling technique to fabricate high-quality integrated photonic devices. (C) 2007 Elsevier B.V. All rights reserved.