화학공학소재연구정보센터
Thin Solid Films, Vol.515, No.24, 8771-8775, 2007
ITO thin films deposited by advanced pulsed laser deposition
Indium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive and homogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature (RT)-180 degrees C, pressure (1-6 x 10(-2) Tort), laser fluence (1-4 j/cm(2)) and wavelength (266-355 nm) on the film properties. The deposition rate, roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness 100-600 nm, roughness 5-10 nm) between RTand 180 degrees C on a large area(5 x 5 cm(2)). The films have electrical resistivity of 8 X 10(-4) Omega cm at RT, 5 x 10(-4) Omega cm at 180 degrees C and an optical transmission in the visible range, around 89%. (c) 2007 Elsevier B.V. All rights reserved.