Electroluminescence refrigeration in light emitting diodes is studied by taking into account carrier transport, carrier recombination, and influence of the dimensionality of electronic density of states (DOS) in active region. The cooling process happens when carriers transport from the metal contacts to the barrier layers. For a given bias voltage, the cooling power density decreases monotonically with the dimension of the DOS and increases as the carrier effective masses increases. (C) 2007 Elsevier Ltd. All rights reserved.