Thermally induced defects in heat treated and then quenched in water n silicon samples have been studied using deep level transient spectroscopy. Two deep levels at energies E-c-0.55 N, and E-c-0.23 eV are observed in high concentration. The emission rate signature and annealing characteristics of energy state E-c-0.55 eV identify it as Au(A). During annealing a level emerges at energy position E-c-0.35 eV. This level has been identified as Au-Fe complex. Au(A) and Au-Fe showed an interesting reversible reaction in temperature range 175 degrees C-325 degrees C which follows the following theoretical relation that adds a new parameter in identifying Au(A) and Au-Fe complex. y = y(o) +/- (2A/pi)[W/{4(x -x(c))(2) + W-2}]. It is also noted that E-c-0.55 eV and E-c-0.23 eV contribute to the formation of Au-Fe complex.