A series of poly(oligothienylene vinylenes) (PT(m)Vs, m = 2-4) with a varying number of consecutively bound thienylene rings are successfully prepared in thin films by chemical vapor deposition polymerization (CVDP) using the corresponding bis(halomethyl)thiophenes as starting materials. The chemical and electronic structures are studied spectroscopically and also by cyclic voltammetry. Top-gate field-effect transistors are fabricated by two consecutive CVDP cycles of PTmV and poly(p-xylylene) followed by the deposition of a Au gate electrode. In the case of a PT3V active layer, a field-effect mobility value of 0.5 x 10(-4) cm(2) V-1 s(-1) is obtained.