Plastic Shottky barriers were fabricated using poly(3,4ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and aluminum as the p-type semiconductor and the metal, respectively, by a facile line-patterning technology in which multiple-line-patterning was utilized for the designed patterns. Based on the measurements of current-voltage and capacitance-voltage characteristics, various electrical parameters of the Shottky barriers were extracted. As a result, the barrier height, work function of the PEDOT:PSS and rectification ratio were 0.78, 4.8 eV and 1.6 x 10(2), respectively.