In polycrystalline silicon analytics segregation effects related to radial non-uniform dopant distributions are of major importance for the interpretation of resistivity data. The determination of dopant concentrations and resistivity profiles in polycrystalline silicon inevitably requires the transformation into a single crystal. Neglecting segregation effects may therefore substantially bias the actual material properties. A tool for the computation of final concentration profiles in floating zone grown ingots with non-uniform initial distributions has been developed, which allows the re-calculation of polysilicon data from single crystal data. (c) 2007 Elsevier B.V. All rights reserved.