The growth of dilute nitride alloys of GaInSb by plasma-assisted molecular beam epitaxy is reported. The principle of lattice matching GaInNSb alloys to GaSb(001) substrates is demonstrated. High resolution X-ray diffraction rocking curves and reciprocal space maps indicate the high crystalline quality of the GaInNSb layers and illustrate a lattice match to Gasb with nitrogen and indium incorporations of 1.8% and 8.4%, respectively. The rms roughness of a nominally lattice matched GaInNSb/Gasb(001) layer was determined from atomic force microscopy to be similar to 1.8 nm. (c) 2007 Elsevier B.V. All rights reserved.