Single crystals of hexagonal boron nitride were grown by the nitride-salt solution temperature-gradient growth technique. Seeded,growth was performed at 0.2 MPa nitrogen pressure between 760 and 900 degrees C. Growth of BN crystals was confirmed by Raman spectroscopy and transmission electron diffraction to be graphite-type boron nitride. The growth mechanism is under investigation, however, the crystals embedded in the solvent matrix were found to be separated from the seed by a boundary layer which seems to be a result of a solvent-seed interaction. This growth technique can be applied to AIN and to GaN with the application of pressure. (c) 2007 Elsevier B.V. All rights reserved.