Single-phase gamma-Tn(2)Se(3) thin films have been prepared on Si(111) substrate by metalorganic chemical vapor deposition technique using dual-source precursors: trimethylindium and hydrogen selenicle. The films have been characterized by X-ray diffraction and scanning electron microscopy. The crystalline quality and surface morphology of single-phase gamma-Tn(2)Se(3) films are much improved by introducing an AIN buffer layer. The optical properties of the films have been studied by temperature dependent photolurninescence (PL) measurements. The single-phase gamma-In2Se3 films that we obtained have strong free exciton emissions of 2.14 eV at 10 K. The band gap of single-phase gamma-In2Se3 at room temperature is estimated at 1.94eV. (c) 2007 Elsevier B.V. All rights reserved.