One-dimensional GaN nanostructures were successfully synthesized, employing Ga2O3 as the initial material. GaN nanowires and nanobelts were obtained via chemical-vapour-deposition (CVD) method and had been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electronic microscope (HRTEM). The Raman spectra of GaN nanowires and nanobelts were analysed. The influences of different technological parameters to the morphology of GaN were studied. (C) 2007 Elsevier B.V. All rights reserved.