Single-crystal germanium films on silicon were prepared by electrodeposition and solid-phase epitaxy. The germanium films were amorphous as-deposited and crystallized into single crystals or polycrystals, depending on the cleanliness of the Si substrates. The low deposition temperature, the ease of thickness control, and the inherit advantage of spatial selectivity of the electrodeposition process make this method a promising way to selectively grow high-quality germanium for device applications. (c) 2007 The Electrochemical Society.