The atomic layer deposition (ALD) growth of Ta2O5 thin films was investigated using tert -butylimidotris(3,5-di- 0 tert -butylpyrazolato)tantalum and ozone as precursors at deposition temperatures between 250 and 500 degrees C. The process provided uniform films and exhibited a large ALD window between 300 and 450 degrees C, in which a constant growth rate of 0.30 angstrom/cycle was observed. Surface-limited growth was confirmed at 325 degrees C, as evidenced by a constant growth rate with increasing precursor dose as delivered by longer pulse lengths. Furthermore, the thickness of films deposited at 325 degrees C varied linearly with the number of deposition cycles, which demonstrates good thickness control typical of ALD growth. The process provided stoichiometric Ta2O5 films with carbon, hydrogen, and nitrogen levels of <= 1.0 <= 1.9 and <= 0.9 atom %, respectively, within the ALD temperature window as determined by time-of-flight elastic recoil detection analysis. X-ray photoelectron spectroscopy measurements were consistent with the presence of Ta(V) and a stoichiometry of Ta2O5, with impurity elements below detection limits. All films were amorphous as deposited as determined by X-ray diffraction.