The crystallization of amorphous indium tin oxide (ITO) films was achieved by rf (13.56 MHz) plasma treatment. Although the films were crystallized after 2 min, the sample temperature was lower than 90 degrees C without compulsory cooling even after 10 min of treatment and polyethylene terephthalate (PET) substrates had no damage. Plasma-crystallized sputtered ITO films have a bixbite structure and the resistivity reached to 1.6 x 10(-4) Omega.cm. ITO thin films have almost the same resistivity in both cases of PET and glass substrates used and plasma-treated PET ITO films have a bit higher resistivity than that of glass ITO films, while mass spectroscopy measurements indicated that ITO films deposited on PET substrates are expected to include no apparent gas species ejected from PET substrate. It was found that the plasma gas pressure is the key parameter for the effective crystallization and the appropriate gas pressure depends on the plasma gas species. (c) 2007 American Vacuum Society.