The influence of plasma-enhanced. chemical vapor deposition conditions on the dielectric performance of as-deposited TiO2 films was studied. It was found that the leakage current density was strongly correlated to the flatband voltage shift,(Delta V-FB). The value of Delta V-FB increased linearly with the oxygen density, while an optimum was observed with respect to plasma power. By appropriate control of these two variables the electrical performance of as-deposited films approached those of annealed samples. (c) 2007American Vacuum Society.