화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.25, No.3, 686-690, 2007
Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy
The electrical properties, deep level spectra, optical transmission, and luminescence spectra were measured on freestanding GaN crystals grown by hydride vapor phase epitaxy. The samples are semi-insulating n type with room temperature resistivity of 3.8 X 10(9) Omega cm and high. electron mobility of 715 cm(2)/V s. The Fermi level in these samples is pinned by a Fe-related level near E-c-0.57 eV that could be due to the Fe2+/Fe3+, transition. This level manifests itself also as a strong blue luminescence band peaked near 2.85 eV. An additional Fe-related band with optical threshold near 1.6 eV is observed in optical transmission spectra. The samples are paramagnetic, suggesting an absence of significant Fe precipitation. (c) 2007 American Vacuum Society.