Hydrogen peroxide is a commonly used oxidizer component in chemical mechanical planarization slurries, used in the processing of Cu metallization in microelectronics applications. We studied the electrochemical reduction of hydrogen peroxide on Cu in 0.1 M H2SO4 solutions using methods including cyclic voltammetry, rotating disk electrode experiments, surface-enhanced Raman spectroscopy, and density functional theory (DFT) calculations. The spectroscopy reveals that the hydrogen peroxide molecule is reduced at negative potentials to form a Cu-OH surface species in acidic solutions, a result consistent with the insight from Tafel slope measurements. DFT calculations support the instability of peroxide relative to the surface-coordinated hydroxide on both Cu(111) and Cu(100) surfaces.