The Al-Cu-Fe system is interesting due to the existence of the quasi crystalline phase Al62.5Cu25Fe12.5 as well as its approximant phases. A two-step procedure of thin film preparation is considered: deposition of a multilayer structure of individual elements and consequential annealing. To analyze the diffusion processes trilayers of individual elements were deposited by sputtering with a total thickness of about 400 tim. Afterwards, the samples were annealed in tube furnace in inert atmosphere. Rutherford backscattering spectrometry, Auger electron spectrometry and X-ray diffraction were used to quantify the depth profiles. The results point out to a three-stage process as a function of rising temperature: first Al and Cu form the gamma-Al4Cu9 compound layer; second the aluminium spreads throughout the film with copper and iron mainly divided. The beta-Al(Cu,Fe) phase is observed. Complete homogenization is followed afterwards. (c) 2007 Elsevier B.V. All rights reserved.