Integration of microcrystalline silicon Thin Film Transistors (TFTs) and excimer laser crystallized silicon TFTs on the same substrate is performed with the objective to limit the maximum temperature of the process to 200 degrees C. For the second type of TFTs, the laser crystallization of 200 nm thick microcrystalline silicon deposited film was optimised first. The maximum electron mobility of both mu c-Si and laser crystallized TFTs is 4 cm(2)/V s and 400 cm(2)/V s respectively. (c) 2006 Elsevier B.V. All rights reserved.