The surface structure and composition of semiconductor/Cu(111) films prepared by thermal evaporation in an ultrahigh vacuum condition have been investigated. As Si atoms were deposited on a Cu(111) surface, diffused root 3 x root 3R30(0) spots were observed up to 2 monolayers while 1 x 1 spots become dimmer as revealed using low-energy electron diffraction technique. Because of a larger electron affinity of Si than that of Cu, the Cu L3M45M45 Auger line shifts to a lower kinetic energy. Annealing treatments at 425 K causes a splitting of the Cu L3M45M45 line. This shows the interdiffusion at the Si/Cu interface and the formation of a Cu-rich surface layer. After annealing treatments, the root 3 x root 3R30(0) domains grow and aggregate to form larger domains as revealed by the decreasing full-width at half maximum of diffraction spots. Ge/Cu(111) shows 1 x 1 structure as annealing up to 500 K. Lack of a dominant structure and a large valence diameter of Ge result in different structures as compared to Si/ CU(111). (c) 2007 Elsevier B.V. All rights reserved.