In this paper, silicon-on-insulator MOSFETs and ring oscillators are, for the first time, fabricated and characterized on 1.5 mu m-thick multilayered dielectric membranes, as a preliminary study for pressure sensing systems. Stresses were mechanically applied on these membranes, evolving drain current changes up to 5% in the devices characteristics, according to their channel type and orientation with respect to the stress, as well as resonance frequency shifts of -0.8% and +2.5`% for the voltage controlled oscillators. Finite element simulations were performed, showing that the stresses are maximized at the center of the membrane anchors and pointing out the location for the devices to provide the best sensitivity. Internal membrane stresses are considered and discussed. (c) 2007 Elsevier Ltd. All rights reserved.